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| Properties of Aluminum Nitride Ceramics | ||
| Item | Unit | Typical Values |
| Physical Properties | ||
| Color | White Grey | |
| Density | g/cm3 | 3.3-3.4 |
| Chemical Formula | / | AlN |
| Gas permeability | 0 | |
| Water Absorption | 0 | |
| Mechanical Properties | ||
| Moh's Hardness | 5 | |
| Vickers hardness | Gpa | 11 |
| Fracture Toughness KIC | MPa•m1/2 | 2.6 |
| Flexural Strength | Mpa | 466-496 |
| Compressive Strength | Mpa(lb/in2x103) | 2100 |
| Modulus of Elasticity(25°C) | Gpa | 320 |
| Thermal Properties | ||
| Thermal Conductivity | W/m·K | 170-186 |
| Thermal Expansion Coefficient | 10-6/ºC | 3.2-3.4 |
| Thermal Shock Resistance | △T (ºC) | 400 |
| Specific Heat(25°C) | J/kg.K | 720 |
| Maximum Use Temperature | °C | 1000 |
| Electronic Properties | ||
| Dielectric Strength | KV/mm | 17-19 |
| Dielectric Constant | Er | 8.8 |
| Dielectric Loss Angle | 1 MHz (×10-3) | 0.3 |
| Volume Resistivity(400~600ºC) | Ω.cm | 2.75*1014 |
Features
Aluminum Nitride (AlN) is an advanced ceramic material that is very important in high-tech fields due to its excellent thermal conductivity and
electrical insulation. Aluminum Nitride also has high mechanical strength and stable chemical properties, making it an ideal choice for electronic
and industrial applications.
1. Excellent thermal conductivity and electrical insulation
Aluminum nitride combines very high thermal conductivity with good electrical insulation, which makes it very valuable in applications that need
to efficiently dissipate heat while also requiring electrical isolation.
Efficient heat dissipation solutions: The high thermal conductivity of aluminum nitride makes it an ideal heat dissipation material for
high-performance electronic devices, such as power semiconductors, high-density integrated circuits, and high-frequency electronic components.
These applications often require materials to be able to quickly and effectively conduct heat to prevent performance degradation or damage due
to overheating.
Electrical applications: While maintaining high thermal conductivity, aluminum nitride also has excellent electrical insulation. This is especially
important for insulating components such as power conversion equipment and high-voltage electrical applications, which require materials to
effectively conduct heat without conducting electricity.
2. Thermal expansion coefficient matching that of silicon and excellent plasma resistance
Aluminum nitride's coefficient of thermal expansion is very close to that of silicon, a property that, along with its plasma resistance, makes it
particularly important in semiconductor manufacturing.
Semiconductor Manufacturing: Because aluminum nitride's coefficient of thermal expansion matches that of silicon, thermal stress caused by
temperature changes can be minimized when used as a substrate or thermal interface material in semiconductor devices. This is critical to
improving the reliability and performance of semiconductor devices.
Plasma Resistance: During semiconductor processing, components often need to withstand harsh plasma environments, which may corrode or
damage some weaker materials. The excellent plasma resistance of aluminum nitride enables it to maintain performance and structural stability
under these conditions.
These characteristics of aluminum nitride make it particularly important in modern high-tech fields, especially in high-performance electronic
devices and semiconductor manufacturing. Its excellent physical properties not only improve the performance of equipment, but also extend the
service life of products, thus providing reliable material solutions in various demanding industrial applications.
